NTMFD5C680NLT1G parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ NTMFD5C680NLT1G

The pictures are for reference only

Brand:

Model:

NTMFD5C680NLT1G

Description:

T6 60V LL SO8FL DUAL

Stock:

30635

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.15

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

7.5A(Ta),26A(Tc)

Drain source voltage (Vdss)

60V

FET Type

2 N-channels(two)

FET function

standard

Gate charge (Qg) at different Vgs (maximum)

5nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

350pF @ 25V

On resistance (maximum) for different Ids and Vgs

28 mΩ @ 5A,10V

Power - maximum

3W(Ta),19W(Tc)

Vgs (th) (maximum) for different Ids

2.2V @ 13µA

packing

TR,CT

series

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerTDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载NTMFD5C680NLT1G.pdf

NTMFD5C680NLT1G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30635,Price reference "real-time change" China/Hongkong。 NTMFD5C680NLT1G package/specs, Download NTMFD5C680NLT1G、Datasheet。